Discrete Semiconductor Products
MJW21196G
ActiveON Semiconductor
BIPOLAR (BJT) SINGLE TRANSISTOR, GENERAL PURPOSE, NPN, 250 V, 200 W, 16 A, 20 ROHS COMPLIANT: YES
Discrete Semiconductor Products
MJW21196G
ActiveON Semiconductor
BIPOLAR (BJT) SINGLE TRANSISTOR, GENERAL PURPOSE, NPN, 250 V, 200 W, 16 A, 20 ROHS COMPLIANT: YES
Technical Specifications
Parameters and characteristics for this part
| Specification | MJW21196G |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 16 A |
| Current - Collector Cutoff (Max) [Max] | 100 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 hFE |
| Frequency - Transition | 4 MHz |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -65 °C |
| Package / Case | TO-247-3 |
| Power - Max [Max] | 200 W |
| Supplier Device Package | TO-247-3 |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 3 V |
| Voltage - Collector Emitter Breakdown (Max) | 250 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 5.46 | |
| 30 | $ 3.08 | |||
| 120 | $ 2.55 | |||
| 510 | $ 2.17 | |||
| 1020 | $ 2.06 | |||
| Newark | Each | 1 | $ 6.04 | |
| 10 | $ 5.39 | |||
| 25 | $ 4.75 | |||
| 60 | $ 4.11 | |||
| 120 | $ 3.88 | |||
| 270 | $ 3.66 | |||
| ON Semiconductor | N/A | 1 | $ 2.20 | |
Description
General part information
MJW21196 Series
The MJW21196 NPN Bipolar Complementary Audio Power Transistor utilizes Perforated Emitter technology and is specifically designed for high power audio output, disk head positioners and linear applications.
Documents
Technical documentation and resources