MJW21196 Series

Bipolar Transistor, NPN, 250 V, 16 A

Catalog

Bipolar Transistor, NPN, 250 V, 16 A

Part	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max)	Current - Collector Cutoff (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Transistor Type	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce	Mounting Type	Power - Max [Max]	Package / Case	Frequency - Transition
ON Semiconductor MJW21196G	16 A	TO-247-3	250 V	100 µA	150 °C	-65 °C	NPN	3 V	20 hFE	Through Hole	200 W	TO-247-3	4 MHz

Catalog

Bipolar Transistor, NPN, 250 V, 16 A

Key Features

• Total Harmonic Distortion Characterized

• High DC Current Gain –hFE= 20 Min @ IC= 8 Adc

• Excellent Gain Linearity

• High SOA: 2.25 A, 80 V, 1 Second

• Pb-Free Packages are Available

Description

The MJW21196 NPN Bipolar Complementary Audio Power Transistor utilizes Perforated Emitter technology and is specifically designed for high power audio output, disk head positioners and linear applications.