Specification	CSD17581Q3AT

Current - Continuous Drain (Id) @ 25°C	60 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	54 nC
Input Capacitance (Ciss) (Max) @ Vds	3640 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	63 W, 2.8 W
Rds On (Max) @ Id, Vgs	3.8 mOhm
Supplier Device Package	8-VSONP (3x3.3)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	1.7 V

CSD17581Q3A Series

30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 4.7 mOhm

Part	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Mounting Type	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	FET Type	Technology	Drain to Source Voltage (Vdss)	Vgs (Max)
Texas Instruments CSD17581Q3AT	60 A	-55 °C	150 °C	8-PowerVDFN	4.5 V 10 V	1.7 V	Surface Mount	8-VSONP (3x3.3)	54 nC	3.8 mOhm	3640 pF	2.8 W 63 W	N-Channel	MOSFET (Metal Oxide)	30 V	20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This 30-V, 3.2-mΩ, SON 3.3-mm × 3.3-mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

Technical documentation and resources