CSD17581Q3A Series

30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 4.7 mOhm

Catalog

30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 4.7 mOhm

Part	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Mounting Type	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	FET Type	Technology	Drain to Source Voltage (Vdss)	Vgs (Max)
Texas Instruments CSD17581Q3AT	60 A	-55 °C	150 °C	8-PowerVDFN	4.5 V 10 V	1.7 V	Surface Mount	8-VSONP (3x3.3)	54 nC	3.8 mOhm	3640 pF	2.8 W 63 W	N-Channel	MOSFET (Metal Oxide)	30 V	20 V

Catalog

30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 4.7 mOhm

Key Features

• Low Qgand QgdLow RDS(on)Low Thermal ResistanceAvalanche RatedLead-FreeRoHS CompliantHalogen FreeSON 3.3-mm × 3.3-mm Plastic PackageLow Qgand QgdLow RDS(on)Low Thermal ResistanceAvalanche RatedLead-FreeRoHS CompliantHalogen FreeSON 3.3-mm × 3.3-mm Plastic Package

Description

This 30-V, 3.2-mΩ, SON 3.3-mm × 3.3-mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications. This 30-V, 3.2-mΩ, SON 3.3-mm × 3.3-mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.