FCA76N60N

Obsolete

ON Semiconductor

POWER MOSFET, N-CHANNEL, SUPREMOS®, FAST, 600 V, 76 A, 36 MΩ, TO-3P

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DocumentsDatasheet Package Drawing-340BZ-TO-3P-3LD / EIAJ SC-65, ISOLATED

Discrete Semiconductor Products

FCA76N60N

Obsolete

ON Semiconductor

POWER MOSFET, N-CHANNEL, SUPREMOS®, FAST, 600 V, 76 A, 36 MΩ, TO-3P

Deep-Dive with AI

DocumentsDatasheet Package Drawing-340BZ-TO-3P-3LD / EIAJ SC-65, ISOLATED

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FCA76N60N

Current - Continuous Drain (Id) @ 25°C	76 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	285 nC
Input Capacitance (Ciss) (Max) @ Vds	12385 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-65-3, TO-3P-3
Power Dissipation (Max)	543 W
Rds On (Max) @ Id, Vgs [Max]	36 mOhm
Supplier Device Package	TO-3PN
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

FCA76N60N Series

Power MOSFET, N-Channel, SUPREMOS®, FAST, 600 V, 76 A, 36 mΩ, TO-3P

Part	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Technology	FET Type	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Supplier Device Package	Rds On (Max) @ Id, Vgs [Max]	Vgs (Max)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor FCA76N60N	4 V	-55 °C	150 °C	MOSFET (Metal Oxide)	N-Channel	285 nC	600 V	10 V	Through Hole	TO-3PN	36 mOhm	30 V	543 W	12385 pF	SC-65-3 TO-3P-3	76 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FCA76N60N Series

The SupreMOS®MOSFET is the next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.