FCA76N60N Series

Power MOSFET, N-Channel, SUPREMOS®, FAST, 600 V, 76 A, 36 mΩ, TO-3P

Catalog

Power MOSFET, N-Channel, SUPREMOS®, FAST, 600 V, 76 A, 36 mΩ, TO-3P

Part	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Technology	FET Type	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Supplier Device Package	Rds On (Max) @ Id, Vgs [Max]	Vgs (Max)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor FCA76N60N	4 V	-55 °C	150 °C	MOSFET (Metal Oxide)	N-Channel	285 nC	600 V	10 V	Through Hole	TO-3PN	36 mOhm	30 V	543 W	12385 pF	SC-65-3 TO-3P-3	76 A

Catalog

Power MOSFET, N-Channel, SUPREMOS®, FAST, 600 V, 76 A, 36 mΩ, TO-3P

Key Features

• RDS(on)= 28mΩ ( Typ.) @ VGS= 10V, ID= 38A

• Ultra low gate charge ( Typ. Qg= 218nC )

• Low effective output capacitance ( Typ. Coss.eff = 914pF )

• 100% avalanche tested

• RoHS compliant

Description

The SupreMOS®MOSFET is the next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.