
Discrete Semiconductor Products
2N2920
ActiveMicrochip Technology
DUAL SMALL-SIGNAL BJT TO-78 ROHS COMPLIANT: YES
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DocumentsProduct Change Notice EN

Discrete Semiconductor Products
2N2920
ActiveMicrochip Technology
DUAL SMALL-SIGNAL BJT TO-78 ROHS COMPLIANT: YES
Deep-Dive with AI
DocumentsProduct Change Notice EN
Technical Specifications
Parameters and characteristics for this part
| Specification | 2N2920 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 30 mA |
| Current - Collector Cutoff (Max) [Max] | 10 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 300 |
| Mounting Type | Through Hole |
| Operating Temperature | 200 °C |
| Package / Case | TO-78-6 Metal Can |
| Power - Max [Max] | 350 mW |
| Supplier Device Package | TO-78-6 |
| Transistor Type | 2 NPN (Dual) |
| Vce Saturation (Max) @ Ib, Ic | 300 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 60 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
2N292 Series
Bipolar (BJT) Transistor Array 2 NPN (Dual) 60V 30mA 350mW Through Hole TO-78-6
Documents
Technical documentation and resources