Discrete Semiconductor Products

HUF76629D3ST

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TRANSISTOR,MOSFET,N-CHANNEL,90V V(BR)DSS,20A I(D),TO-252AA ROHS COMPLIANT: YES

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Discrete Semiconductor Products

Active

TRANSISTOR,MOSFET,N-CHANNEL,90V V(BR)DSS,20A I(D),TO-252AA ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	HUF76629D3ST

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	46 nC
Input Capacitance (Ciss) (Max) @ Vds	1285 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max) [Max]	110 W
Rds On (Max) @ Id, Vgs	52 mOhm
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id	3 V

N-Channel Logic Level UltraFET<sup>®</sup> Power MOSFET 100V, 20A, 52mΩ

Part	FET Type	Current - Continuous Drain (Id) @ 25°C	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Technology	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type
ON Semiconductor HUF76629D3ST	N-Channel	20 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	46 nC	110 W	52 mOhm	-55 °C	175 ░C	4.5 V 10 V	16 V	100 V	3 V	MOSFET (Metal Oxide)	TO-252AA	1285 pF	Surface Mount

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General part information

N-Channel Logic Level UltraFET®Power MOSFET 100 V, 20 A, 52 mΩ

Technical documentation and resources