HUF76629D3S Series

N-Channel Logic Level UltraFET® Power MOSFET 100V, 20A, 52mΩ

Catalog

N-Channel Logic Level UltraFET® Power MOSFET 100V, 20A, 52mΩ

Part	FET Type	Current - Continuous Drain (Id) @ 25°C	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Technology	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type
ON Semiconductor HUF76629D3ST	N-Channel	20 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	46 nC	110 W	52 mOhm	-55 °C	175 ░C	4.5 V 10 V	16 V	100 V	3 V	MOSFET (Metal Oxide)	TO-252AA	1285 pF	Surface Mount

N-Channel Logic Level UltraFET® Power MOSFET 100V, 20A, 52mΩ

• Typ rDS(on)= 41 mΩ at VGS= 10V, ID= 20A

• Typ Qg(tot)= 39 nC at VGS= 10 V, ID= 20 A

• UIS Capability

• RoHS Compliant

• Qualified to AEC Q101

N-Channel Logic Level UltraFET®Power MOSFET 100 V, 20 A, 52 mΩ