Deep-Dive with AI
Search across all available documentation for this part.
DocumentsProduct Change Notice EN
Deep-Dive with AI
DocumentsProduct Change Notice EN
Technical Specifications
Parameters and characteristics for this part
| Specification | 2N2608 |
|---|---|
| Current - Drain (Idss) @ Vds (Vgs=0) | 1 mA |
| FET Type | P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 10 pF |
| Mounting Type | Through Hole |
| Package / Case | TO-18-3 Metal Can, TO-206AA |
| Supplier Device Package | TO-18 |
| Supplier Device Package | TO-206AA |
| Voltage - Breakdown (V(BR)GSS) | 30 V |
| Voltage - Cutoff (VGS off) @ Id | 750 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 100 | $ 69.73 | |
| Microchip Direct | N/A | 1 | $ 75.09 | |
| Newark | Each | 100 | $ 69.73 | |
| 500 | $ 67.05 | |||
Description
General part information
2N2608-JFET-PChannel Series
This specification covers the performance requirements for P-channel, junction, silicon field-effect 2N2609 transistors. One level of product assurance (JAN) is provided for each device type as specified in MIL-PRF-19500/296. The device package outlines are a modified DO-206AA (formerly a modified TO-18) and an unleaded surface mount (UB).
Documents
Technical documentation and resources