Zenode.ai Logo
Beta
STWA72N60DM2AG
Discrete Semiconductor Products

STWA72N60DM2AG

Active
STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 600 V, 37 MOHM TYP., 66 A, MDMESH DM2 POWER MOSFET IN A TO-247 LONG LEADS PACKAGE

Deep-Dive with AI

Search across all available documentation for this part.

STWA72N60DM2AG
Discrete Semiconductor Products

STWA72N60DM2AG

Active
STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 600 V, 37 MOHM TYP., 66 A, MDMESH DM2 POWER MOSFET IN A TO-247 LONG LEADS PACKAGE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTWA72N60DM2AG
Current - Continuous Drain (Id) @ 25°C66 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]121 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds [Max]5508 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power Dissipation (Max)446 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs42 mOhm
Supplier Device PackageTO-247 Long Leads
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 6.36

Description

General part information

STWA72N60DM2AG Series

This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast-recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.

Documents

Technical documentation and resources