TPS28226DRBT
LTB4-A, 27-V HALF BRIDGE GATE DRIVER WITH 8-V UVLO FOR SYNCHRONOUS RECTIFICATION
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TPS28226DRBT
LTB4-A, 27-V HALF BRIDGE GATE DRIVER WITH 8-V UVLO FOR SYNCHRONOUS RECTIFICATION
Technical Specifications
Parameters and characteristics for this part
| Specification | TPS28226DRBT |
|---|---|
| Channel Type | Synchronous |
| Driven Configuration | Half-Bridge |
| Gate Type | N-Channel MOSFET |
| High Side Voltage - Max (Bootstrap) [Max] | 33 V |
| Input Type | Non-Inverting |
| Mounting Type | Surface Mount |
| Number of Drivers | 2 |
| Operating Temperature [Max] | 125 ¯C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 8-VDFN Exposed Pad |
| Rise / Fall Time (Typ) [custom] | 10 ns |
| Rise / Fall Time (Typ) [custom] | 10 ns |
| Supplier Device Package | 8-SON (3x3) |
| Voltage - Supply [Max] | 8.8 V |
| Voltage - Supply [Min] | 6.8 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 2.87 | |
| 10 | $ 1.86 | |||
| 25 | $ 1.59 | |||
| 100 | $ 1.30 | |||
| Digi-Reel® | 1 | $ 2.87 | ||
| 10 | $ 1.86 | |||
| 25 | $ 1.59 | |||
| 100 | $ 1.30 | |||
| Tape & Reel (TR) | 500 | $ 1.06 | ||
| 750 | $ 1.02 | |||
| 1250 | $ 0.97 | |||
| 1750 | $ 0.94 | |||
| 2500 | $ 0.91 | |||
| 6250 | $ 0.85 | |||
| Texas Instruments | SMALL T&R | 1 | $ 1.46 | |
| 100 | $ 1.20 | |||
| 250 | $ 0.86 | |||
| 1000 | $ 0.65 | |||
Description
General part information
TPS28226 Series
The is a high-speed driver for N-channel complimentary driven power MOSFETs with adaptive dead-time control. This driver is optimized for use in variety of high-current one and multi-phase DC-to-DC converters. The is a solution that provides high efficiency, small size and low EMI emissions.
The efficiency is achieved by up to 8.8-V gate drive voltage, 14-ns adaptive dead-time control, 14-ns propagation delays and high-current 2-A source and 4-A sink drive capability. The 0.4-Ω impedance for the lower gate driver holds the gate of power MOSFET below its threshold and ensures no shoot-through current at high dV/dt phase node transitions. The bootstrap capacitor charged by an internal diode allows use of N-channel MOSFETs in a half-bridge configuration.
The is a high-speed driver for N-channel complimentary driven power MOSFETs with adaptive dead-time control. This driver is optimized for use in variety of high-current one and multi-phase DC-to-DC converters. The is a solution that provides high efficiency, small size and low EMI emissions.
Documents
Technical documentation and resources
