Discrete Semiconductor Products
TK4A80E,S4X
ActiveToshiba Semiconductor and Storage
HIGH & LOW OUTPUT SOLUTIONS | TOSHIBA 400V - 900V MOSFETS, N-CH MOSFET, 800 V, 3.5 Ω@10V, TO-220SIS, Π-MOSⅧ
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Discrete Semiconductor Products
TK4A80E,S4X
ActiveToshiba Semiconductor and Storage
HIGH & LOW OUTPUT SOLUTIONS | TOSHIBA 400V - 900V MOSFETS, N-CH MOSFET, 800 V, 3.5 Ω@10V, TO-220SIS, Π-MOSⅧ
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Technical Specifications
Parameters and characteristics for this part
| Specification | TK4A80E,S4X |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 4 A |
| Drain to Source Voltage (Vdss) | 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 650 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-220-3 Full Pack |
| Power Dissipation (Max) | 35 W |
| Rds On (Max) @ Id, Vgs | 3.5 Ohm |
| Supplier Device Package | TO-220SIS |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
TK4A80E Series
N-Channel 800 V 4A (Ta) 35W (Tc) Through Hole TO-220SIS
Documents
Technical documentation and resources