TK4A80E Series
Manufacturer: Toshiba Semiconductor and Storage
Beta
⌘K
HIGH & LOW OUTPUT SOLUTIONS | TOSHIBA 400V - 900V MOSFETS, N-CH MOSFET, 800 V, 3.5 Ω@10V, TO-220SIS, Π-MOSⅧ
| Part | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Package / Case | Power Dissipation (Max) | Vgs(th) (Max) @ Id | FET Type | Operating Temperature | Supplier Device Package | Technology | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds [Max] | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | Through Hole | 4 A | 3.5 Ohm | TO-220-3 Full Pack | 35 W | 4 V | N-Channel | 150 °C | TO-220SIS | MOSFET (Metal Oxide) | 800 V | 15 nC | 650 pF | 30 V | 10 V |