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TO-252AA
Discrete Semiconductor Products

FDD6670A

Obsolete
ON Semiconductor

N-CHANNEL LOGIC LEVEL POWERTRENCH<SUP>®</SUP> MOSFET, 30V, 66A, 8MΩ

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TO-252AA
Discrete Semiconductor Products

FDD6670A

Obsolete
ON Semiconductor

N-CHANNEL LOGIC LEVEL POWERTRENCH<SUP>®</SUP> MOSFET, 30V, 66A, 8MΩ

Technical Specifications

Parameters and characteristics for this part

SpecificationFDD6670A
Current - Continuous Drain (Id) @ 25°C [Max]15 A, 66 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]22 nC
Input Capacitance (Ciss) (Max) @ Vds1755 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)63 W, 3.2 W
Rds On (Max) @ Id, Vgs8 mOhm
Supplier Device PackageTO-252AA
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.82
10$ 1.16
100$ 0.78
500$ 0.62
1000$ 0.56
Digi-Reel® 1$ 1.82
10$ 1.16
100$ 0.78
500$ 0.62
1000$ 0.56
Tape & Reel (TR) 2500$ 0.51
5000$ 0.47
7500$ 0.46

Description

General part information

FDD6670A Series

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON), fast switching speed and extremely low RDS(ON)in a small package.