FDD6670A Series

N-Channel Logic Level PowerTrench® MOSFET, 30V, 66A, 8mΩ

Catalog

N-Channel Logic Level PowerTrench® MOSFET, 30V, 66A, 8mΩ

Part	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Technology	Current - Continuous Drain (Id) @ 25°C [Max]	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Vgs (Max)	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	FET Type
ON Semiconductor FDD6670A	3 V	22 nC	8 mOhm	3.2 W 63 W	4.5 V 10 V	Surface Mount	MOSFET (Metal Oxide)	15 A 66 A	TO-252AA	1755 pF	30 V	20 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	-55 °C	175 ░C	N-Channel

Catalog

N-Channel Logic Level PowerTrench® MOSFET, 30V, 66A, 8mΩ

Key Features

• 66 A, 30 V

• RDS(on)= 8 mΩ @ VGS= 10 V

• RDS(on)= 10 mΩ @ VGS= 4.5 V

• Low gate charge

• Fast switching speed

• High performance trench technology for extremely low RDS(on)

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON), fast switching speed and extremely low RDS(ON)in a small package.