Specification	FCP380N60

Current - Continuous Drain (Id) @ 25°C	10.2 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	40 nC
Input Capacitance (Ciss) (Max) @ Vds	1665 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	106 W
Rds On (Max) @ Id, Vgs	380 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

FCP380N60E Series

Power MOSFET, N-Channel, SUPERFET® II, Easy Drive, 600V, 10.2A, 380mΩ, TO-220

Part	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Rds On (Max) @ Id, Vgs	Mounting Type	Supplier Device Package	FET Type	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]
ON Semiconductor FCP380N60	106 W	-55 °C	150 °C	MOSFET (Metal Oxide)	600 V	1665 pF	3.5 V	10.2 A	20 V	380 mOhm	Through Hole	TO-220-3	N-Channel	TO-220-3	10 V	40 nC
ON Semiconductor FCP380N60E	106 W	-55 °C	150 °C	MOSFET (Metal Oxide)	600 V	1770 pF	3.5 V	10.2 A	20 V	380 mOhm	Through Hole	TO-220-3	N-Channel	TO-220-3	10 V	45 nC
ON Semiconductor FCP380N60E	106 W	-55 °C	150 °C	MOSFET (Metal Oxide)	600 V	1770 pF	3.5 V	10.2 A	20 V	380 mOhm	Through Hole	TO-220-3	N-Channel	TO-220-3	10 V	45 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 3.76
		50	$ 1.91
		100	$ 1.73
		500	$ 1.42
		1000	$ 1.31
		2000	$ 1.29
Newark	Each	1	$ 3.93
		10	$ 3.78
		25	$ 3.17
		50	$ 2.55
		100	$ 2.39
		250	$ 2.38
ON Semiconductor	N/A	1	$ 1.19

Description

General part information

FCP380N60E Series

SuperFET®II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

Documents

Technical documentation and resources

Technical Data Sheet EN

Datasheet

Package Drawing-340AT-TO-220-3LD

Package Drawing