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Technical Specifications
Parameters and characteristics for this part
| Specification | NSVEMD4DXV6T1G |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 100 mA |
| Current - Collector Cutoff (Max) [Max] | 500 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 80 |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Package / Case | SOT-666, SOT-563 |
| Power - Max [Max] | 357 mW |
| Qualification | AEC-Q101 |
| Resistor - Base (R1) | 47 kOhms |
| Resistor - Emitter Base (R2) | 47000 Ohms |
| Supplier Device Package | SOT-563 |
| Transistor Type | 1 NPN, 1 PNP |
| Vce Saturation (Max) @ Ib, Ic | 250 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 50 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
EMD4DXV6 Series
The Dual Bipolar Digital Transistor contains a single transistor with a monolithic bias network consisting of two resistors: a series base resistor and a base¿emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. This eliminates these individual components by integrating them into a single device. In the EMD4DXV6T1 series, two complementary devices are housed in the SOT¿563 package, which is ideal for low power surface mount applications where board space is at a premium.
Documents
Technical documentation and resources
