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FT7511L6X
Discrete Semiconductor Products

EMD4DXV6T5

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ON Semiconductor

COMPLEMENTARY BIPOLAR DIGITAL TRANSISTOR (BRT)

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FT7511L6X
Discrete Semiconductor Products

EMD4DXV6T5

Active
ON Semiconductor

COMPLEMENTARY BIPOLAR DIGITAL TRANSISTOR (BRT)

Technical Specifications

Parameters and characteristics for this part

SpecificationEMD4DXV6T5
Current - Collector (Ic) (Max) [Max]100 mA
Current - Collector Cutoff (Max) [Max]500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]80
Mounting TypeSurface Mount
Package / CaseSOT-666, SOT-563
Power - Max [Max]357 mW
Resistor - Base (R1)47 kOhms
Resistor - Emitter Base (R2)47000 Ohms
Supplier Device PackageSOT-563
Vce Saturation (Max) @ Ib, Ic250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]50 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 6662$ 0.05

Description

General part information

EMD4DXV6 Series

The Dual Bipolar Digital Transistor contains a single transistor with a monolithic bias network consisting of two resistors: a series base resistor and a base¿emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. This eliminates these individual components by integrating them into a single device. In the EMD4DXV6T1 series, two complementary devices are housed in the SOT¿563 package, which is ideal for low power surface mount applications where board space is at a premium.