Discrete Semiconductor Products

NTMD3P03R2G

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TRANSISTOR MOSFET ARRAY DUAL P-CH 30V 3.86A 8-PIN SOIC T/R

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Discrete Semiconductor Products

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TRANSISTOR MOSFET ARRAY DUAL P-CH 30V 3.86A 8-PIN SOIC T/R

Technical Specifications

Parameters and characteristics for this part

Specification	NTMD3P03R2G

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	2.34 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	25 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	750 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	730 mW
Rds On (Max) @ Id, Vgs	85 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

Dual P-Channel Power MOSFET -30V, -3.05A, 85mΩ

Part	Power - Max [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Package / Case [y]	Package / Case [x]	Supplier Device Package	FET Feature	Technology	Vgs(th) (Max) @ Id	Configuration
ON Semiconductor NTMD3P03R2G	730 mW	-55 °C	150 °C	2.34 A	85 mOhm	30 V	25 nC	Surface Mount	750 pF	8-SOIC	3.9 mm	0.154 in	8-SOIC	Logic Level Gate	MOSFET (Metal Oxide)	2.5 V	2 P-Channel

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General part information

Power MOSFET -3.05 Amps, -30 Volts Dual P−Channel SOIC−8

Technical documentation and resources