NTMD3P03 Series

Dual P-Channel Power MOSFET -30V, -3.05A, 85mΩ

Catalog

Dual P-Channel Power MOSFET -30V, -3.05A, 85mΩ

Part	Power - Max [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Package / Case [y]	Package / Case [x]	Supplier Device Package	FET Feature	Technology	Vgs(th) (Max) @ Id	Configuration
ON Semiconductor NTMD3P03R2G	730 mW	-55 °C	150 °C	2.34 A	85 mOhm	30 V	25 nC	Surface Mount	750 pF	8-SOIC	3.9 mm	0.154 in	8-SOIC	Logic Level Gate	MOSFET (Metal Oxide)	2.5 V	2 P-Channel

Dual P-Channel Power MOSFET -30V, -3.05A, 85mΩ

• High Efficiency Components in a Dual SO-8 Package

• High Density Power MOSFET with Low RDS(on)

• Miniature SOIC-8 Surface Mount Package -- Saves Board Space

• Diode Exhibits High Speed with Soft Recovery

• IDSSSpecified at Elevated Temperature

• Avalanche Energy Specified

• Mounting Information for the SO-8 Package is Provided

• RoHS Compliant

Power MOSFET -3.05 Amps, -30 Volts Dual P−Channel SOIC−8