Specification	STD13N65M2

Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	17 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	590 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)	110 W
Rds On (Max) @ Id, Vgs	430 mOhm
Supplier Device Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

STD13N65M2 Series

N-channel 650 V, 370 mOhm typ., 10 A MDmesh M2 Power MOSFET in a DPAK package

Part	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Package / Case	Rds On (Max) @ Id, Vgs	Vgs (Max)	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature	Mounting Type	Technology
STMicroelectronics STD13N65M2	N-Channel	590 pF	DPAK	17 nC	4 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	430 mOhm	25 V	110 W	10 A	650 V	10 V	150 °C	Surface Mount	MOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	759	$ 1.09
Newark	Each (Supplied on Cut Tape)	1	$ 2.44
		10	$ 1.70
		25	$ 1.57
		50	$ 1.44
		100	$ 1.31
		250	$ 1.21
		500	$ 1.11
		1000	$ 1.05

Description

General part information

STD13N65M2 Series

This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.