DN2530N3-G
ActiveMOSFET TRANSISTOR, N CHANNEL, 175 MA, 300 V, 12 OHM, 0 V ROHS COMPLIANT: YES
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DN2530N3-G
ActiveMOSFET TRANSISTOR, N CHANNEL, 175 MA, 300 V, 12 OHM, 0 V ROHS COMPLIANT: YES
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Technical Specifications
Parameters and characteristics for this part
| Specification | DN2530N3-G |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 175 mA |
| Drain to Source Voltage (Vdss) | 300 V |
| Drive Voltage (Max Rds On, Min Rds On) | 0 V |
| FET Feature | Depletion Mode |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 300 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-226-3, TO-92-3 |
| Power Dissipation (Max) | 740 mW |
| Rds On (Max) @ Id, Vgs | 12 Ohm |
| Supplier Device Package | TO-92 |
| Supplier Device Package | TO-226 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bag | 1 | $ 0.79 | |
| 25 | $ 0.65 | |||
| 100 | $ 0.60 | |||
| Microchip Direct | BAG | 1 | $ 0.79 | |
| 25 | $ 0.65 | |||
| 100 | $ 0.60 | |||
| 1000 | $ 0.58 | |||
| Newark | Each | 1 | $ 0.78 | |
| 10 | $ 0.77 | |||
| 25 | $ 0.68 | |||
| 50 | $ 0.65 | |||
| 100 | $ 0.62 | |||
Description
General part information
DN2530 Series
The DN2530 is a low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.
Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Documents
Technical documentation and resources
