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TO-252AA
Discrete Semiconductor Products

FDD86540

Active
ON Semiconductor

POWER MOSFET, N CHANNEL, 60 V, 136 A, 0.0034 OHM, TO-252 (DPAK), SURFACE MOUNT

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TO-252AA
Discrete Semiconductor Products

FDD86540

Active
ON Semiconductor

POWER MOSFET, N CHANNEL, 60 V, 136 A, 0.0034 OHM, TO-252 (DPAK), SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

SpecificationFDD86540
Current - Continuous Drain (Id) @ 25°C21.5 A, 50 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)8 V, 10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]90 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]6340 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)3.1 W, 127 W
Rds On (Max) @ Id, Vgs4.1 mOhm
Supplier Device PackageTO-252AA
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 3.13
10$ 2.04
100$ 1.42
500$ 1.15
1000$ 1.06
Digi-Reel® 1$ 3.13
10$ 2.04
100$ 1.42
500$ 1.15
1000$ 1.06
Tape & Reel (TR) 2500$ 1.00
NewarkEach (Supplied on Full Reel) 1$ 1.35
3000$ 1.27
6000$ 1.21
12000$ 1.09
18000$ 1.05
30000$ 1.01
ON SemiconductorN/A 1$ 0.44

Description

General part information

FDD86540 Series

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.