FDD86540 Series

N-Channel PowerTrench® MOSFET 60V, 136 A, 4.1 mΩ

Catalog

N-Channel PowerTrench® MOSFET 60V, 136 A, 4.1 mΩ

Part	Technology	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Mounting Type	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Vgs (Max)	Drain to Source Voltage (Vdss)	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Vgs(th) (Max) @ Id
ON Semiconductor FDD86540	MOSFET (Metal Oxide)	21.5 A 50 A	90 nC	3.1 W 127 W	Surface Mount	4.1 mOhm	6340 pF	8 V 10 V	TO-252AA	20 V	60 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	-55 °C	150 °C	N-Channel	4 V

Catalog

N-Channel PowerTrench® MOSFET 60V, 136 A, 4.1 mΩ

Key Features

• Max rDS(on)= 4.1 mΩ at VGS= 10 V, ID= 21.5 A

• Max rDS(on)= 5 mΩ at VGS= 8 V, ID= 19.5 A

• 100% UIL tested

• RoHS Compliant

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.