Discrete Semiconductor Products

ECH8308-TL-H

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P-CHANNEL POWER MOSFET, -12V, -10A, 12.5MOHM, SINGLE ECH8/ REEL ROHS COMPLIANT: YES

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Discrete Semiconductor Products

Active

P-CHANNEL POWER MOSFET, -12V, -10A, 12.5MOHM, SINGLE ECH8/ REEL ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	ECH8308-TL-H

Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	26 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2300 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Rds On (Max) @ Id, Vgs [Max]	12.5 mOhm
Supplier Device Package	8-ECH
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V

Part	Mounting Type	Rds On (Max) @ Id, Vgs [Max]	Technology	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Operating Temperature	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor ECH8308-TL-H	Surface Mount	12.5 mOhm	MOSFET (Metal Oxide)	8-ECH	1.8 V 4.5 V	10 V	2300 pF	P-Channel	26 nC	12 V	150 °C	10 A
ON Semiconductor ECH8308-P-TL-H	Surface Mount			8-ECH

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

ECH8308 is a P-Channel Power MOSFET, -12V, -10A, 12.5mΩ, Single ECH8 for General-Purpose Switching Device Applications.