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JANTXV2N5745
Discrete Semiconductor Products

JANTXV2N5745

Active
Microchip Technology

PNP SILICON POWER -60V TO -80V, -20A TO -30A

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Documents2N4399 2N5745
JANTXV2N5745
Discrete Semiconductor Products

JANTXV2N5745

Active
Microchip Technology

PNP SILICON POWER -60V TO -80V, -20A TO -30A

Deep-Dive with AI

Documents2N4399 2N5745

Technical Specifications

Parameters and characteristics for this part

SpecificationJANTXV2N5745
Current - Collector (Ic) (Max)20 A
Current - Collector Cutoff (Max) [Max]100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce15 hFE
GradeMilitary
Mounting TypeThrough Hole
Operating Temperature [Max]200 C
Operating Temperature [Min]-55 °C
Package / CaseTO-3, TO-204AA
Power - Max [Max]5 W
QualificationMIL-PRF-19500/433
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic1 V
Voltage - Collector Emitter Breakdown (Max) [Max]80 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 1$ 687.50
Microchip DirectN/A 1$ 98.00
NewarkEach 1$ 98.00
100$ 91.00
500$ 87.50

Description

General part information

JANTXV2N5745-Transistor Series

This specification covers the performance requirements for PNP silicon, high-power, 2N4399 and 2N5745 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/433.

Documents

Technical documentation and resources