Specification	FDG8850NZ

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	750 mA
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	1.44 nC
Input Capacitance (Ciss) (Max) @ Vds	120 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-TSSOP, SC-88, SOT-363
Power - Max [Max]	300 mW
Rds On (Max) @ Id, Vgs	400 mOhm
Supplier Device Package	SC-88 (SC-70-6)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.5 V

FDG8850NZ Series

Dual N-Channel PowerTrench® MOSFET 30V, 0.75A, 0.4Ω

Part	Drain to Source Voltage (Vdss)	Configuration	Technology	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Power - Max [Max]	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	FET Feature
ON Semiconductor FDG8850NZ	30 V	2 N-Channel (Dual)	MOSFET (Metal Oxide)	1.44 nC	Surface Mount	120 pF	6-TSSOP SC-88 SOT-363	300 mW	400 mOhm	750 mA	1.5 V	-55 °C	150 °C	SC-88 (SC-70-6)	Logic Level Gate

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.84
		10	$ 0.52
		100	$ 0.34
		500	$ 0.26
		1000	$ 0.23
	Digi-Reel®	1	$ 0.55
		10	$ 0.47
		100	$ 0.33
		500	$ 0.25
		1000	$ 0.21
	Tape & Reel (TR)	3000	$ 0.18
		6000	$ 0.18
		9000	$ 0.16
		30000	$ 0.16
ON Semiconductor	N/A	1	$ 0.17

Description

General part information

FDG8850NZ Series

This dual N-Channel logic level enhancement mode field effect transistors are produced using a proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values.