Discrete Semiconductor Products

STDLED656

Obsolete

MOSFET N-CH 650V 6A DPAK

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 650V 6A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	STDLED656

Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	34 nC
Input Capacitance (Ciss) (Max) @ Vds	895 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max) [Max]	70 W
Rds On (Max) @ Id, Vgs	1.3 Ohm
Supplier Device Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	Operating Temperature	Supplier Device Package	Vgs (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Technology	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Package / Case	FET Type	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs
STMicroelectronics STDLED656	150 °C	DPAK	30 V	650 V	34 nC	895 pF	Surface Mount	1.3 Ohm	10 V	MOSFET (Metal Oxide)	70 W	4.5 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	N-Channel	6 A
STMicroelectronics STDLED625H	150 °C	DPAK	30 V	620 V		560 pF	Surface Mount	2 Ohm	10 V	MOSFET (Metal Oxide)	70 W	4.5 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	N-Channel	4.5 A	23 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

N-Channel 650 V 6A (Tc) 70W (Tc) Surface Mount DPAK

Technical documentation and resources