Discrete Semiconductor Products

ACGRAT105L-HF

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Comchip Technology

DIODE 1KV 1A 2-PIN CASE 2010 T/R AUTOMOTIVE AEC-Q101

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Discrete Semiconductor Products

Active

Comchip Technology

DIODE 1KV 1A 2-PIN CASE 2010 T/R AUTOMOTIVE AEC-Q101

Technical Specifications

Parameters and characteristics for this part

Specification	ACGRAT105L-HF

Capacitance @ Vr, F	8.2 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	5 µA
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	2010 (5025 Metric)
Qualification	AEC-Q101
Speed	200 mA, 500 ns
Supplier Device Package	2010
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1000 V
Voltage - Forward (Vf) (Max) @ If	930 mV

Part	Technology	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Qualification	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Capacitance @ Vr, F	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Grade	Package / Case	Supplier Device Package
Comchip Technology ACGRAT105-HF	Standard	1 V	5 µA	1 A	AEC-Q101	Surface Mount	175 ░C	-65 C	8 pF	1000 V	200 mA 500 ns	Automotive	2010 (5025 Metric)	2010
Comchip Technology ACGRAT105L-HF	Standard	930 mV	5 µA	1 A	AEC-Q101	Surface Mount	175 ░C	-65 C	8.2 pF	1000 V	200 mA 500 ns	Automotive	2010 (5025 Metric)	2010

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1000 V 1A Surface Mount 2010

Technical documentation and resources

No documents available