Discrete Semiconductor Products

ACGRAT105-HF

LTB

Comchip Technology

DIODE GEN PURP 1KV 1A 2010

Search across all available documentation for this part.

Discrete Semiconductor Products

LTB

Comchip Technology

DIODE GEN PURP 1KV 1A 2010

Technical Specifications

Parameters and characteristics for this part

Specification	ACGRAT105-HF

Capacitance @ Vr, F	8 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	5 µA
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	2010 (5025 Metric)
Qualification	AEC-Q101
Speed	200 mA, 500 ns
Supplier Device Package	2010
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1000 V
Voltage - Forward (Vf) (Max) @ If	1 V

Part	Technology	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Qualification	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Capacitance @ Vr, F	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Grade	Package / Case	Supplier Device Package
Comchip Technology ACGRAT105-HF	Standard	1 V	5 µA	1 A	AEC-Q101	Surface Mount	175 ░C	-65 C	8 pF	1000 V	200 mA 500 ns	Automotive	2010 (5025 Metric)	2010
Comchip Technology ACGRAT105L-HF	Standard	930 mV	5 µA	1 A	AEC-Q101	Surface Mount	175 ░C	-65 C	8.2 pF	1000 V	200 mA 500 ns	Automotive	2010 (5025 Metric)	2010

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1000 V 1A Surface Mount 2010

Technical documentation and resources

No documents available