Discrete Semiconductor Products

SI6469DQ-T1-GE3

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MOSFET P-CH 8V 8TSSOP

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Discrete Semiconductor Products

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MOSFET P-CH 8V 8TSSOP

Technical Specifications

Parameters and characteristics for this part

Specification	SI6469DQ-T1-GE3

Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	8 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	40 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-TSSOP
Package / Case [custom]	0.173 "
Package / Case [custom]	4.4 mm
Power Dissipation (Max)	1.5 W
Rds On (Max) @ Id, Vgs	28 mOhm
Supplier Device Package	8-TSSOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	450 mV

Part	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Package / Case [custom]	Package / Case [custom]	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Vgs (Max)	FET Type	Technology
Vishay General Semiconductor - Diodes Division SI6469DQ-T1-GE3	1.5 W	1.8 V 4.5 V	Surface Mount	-55 °C	150 °C	8-TSSOP	0.173 "	4.4 mm	6 A	8-TSSOP	450 mV	40 nC	8 V	28 mOhm	8 V	P-Channel	MOSFET (Metal Oxide)
Vishay General Semiconductor - Diodes Division SI6469DQ-T1-E3	1.5 W	1.8 V 4.5 V	Surface Mount	-55 °C	150 °C	8-TSSOP	0.173 "	4.4 mm	6 A	8-TSSOP	450 mV	40 nC	8 V	28 mOhm	8 V	P-Channel	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 8 V 6A (Ta) 1.5W (Ta) Surface Mount 8-TSSOP

Technical documentation and resources

No documents available