SI6469 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET P-CH 8V 8TSSOP
| Part | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Package / Case [custom] | Package / Case [custom] | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs [Max] | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Vgs (Max) | FET Type | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 1.5 W | 1.8 V 4.5 V | Surface Mount | -55 °C | 150 °C | 8-TSSOP | 0.173 " | 4.4 mm | 6 A | 8-TSSOP | 450 mV | 40 nC | 8 V | 28 mOhm | 8 V | P-Channel | MOSFET (Metal Oxide) |
Vishay General Semiconductor - Diodes Division | 1.5 W | 1.8 V 4.5 V | Surface Mount | -55 °C | 150 °C | 8-TSSOP | 0.173 " | 4.4 mm | 6 A | 8-TSSOP | 450 mV | 40 nC | 8 V | 28 mOhm | 8 V | P-Channel | MOSFET (Metal Oxide) |