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TO-263
Discrete Semiconductor Products

FGB40N60SM

Obsolete
ON Semiconductor

IGBT FIELD STOP 600V 80A D2PAK

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TO-263
Discrete Semiconductor Products

FGB40N60SM

Obsolete
ON Semiconductor

IGBT FIELD STOP 600V 80A D2PAK

Technical Specifications

Parameters and characteristics for this part

SpecificationFGB40N60SM
Current - Collector (Ic) (Max) [Max]80 A
Current - Collector Pulsed (Icm)120 A
IGBT TypeField Stop
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power - Max [Max]349 W
Supplier Device PackageTO-263 (D2PAK)
Switching Energy260 µJ, 870 µJ
Td (on/off) @ 25°C12 ns, 92 ns
Test Condition40 A, 15 V, 400 V, 6 Ohm
Vce(on) (Max) @ Vge, Ic2.3 V
Voltage - Collector Emitter Breakdown (Max) [Max]600 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

FGB40N60SM Series

Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 2ndgeneration IGBTs offer the optimum performance for welder and PFC applications where low conduction and switching losses are essential.