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Technical Specifications
Parameters and characteristics for this part
| Specification | FGB40N60SM |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 80 A |
| Current - Collector Pulsed (Icm) | 120 A |
| IGBT Type | Field Stop |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263AB, TO-263-3 |
| Power - Max [Max] | 349 W |
| Supplier Device Package | TO-263 (D2PAK) |
| Switching Energy | 260 µJ, 870 µJ |
| Td (on/off) @ 25°C | 12 ns, 92 ns |
| Test Condition | 40 A, 15 V, 400 V, 6 Ohm |
| Vce(on) (Max) @ Vge, Ic | 2.3 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 600 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
FGB40N60SM Series
Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 2ndgeneration IGBTs offer the optimum performance for welder and PFC applications where low conduction and switching losses are essential.
Documents
Technical documentation and resources