Catalog
IGBT, 600V, 40A, Field Stop
Key Features
• Maximum junction temperature : TJ=175 °C
• Positive temperaure co-efficient for easy parallel operating
• High current capability
• Low saturation voltage: VCE(sat)=1.9V(Typ.) @ IC=40A
• Fast switching: EOFF=6.5uJ/A
• Tightened parameter distribution
• RoHS compliant
• IR reflow only
Description
AI
Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 2ndgeneration IGBTs offer the optimum performance for welder and PFC applications where low conduction and switching losses are essential.