Discrete Semiconductor Products

SIHD14N60E-GE3

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MOSFET N-CH 600V 13A DPAK

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Discrete Semiconductor Products

Active

MOSFET N-CH 600V 13A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SIHD14N60E-GE3

Current - Continuous Drain (Id) @ 25°C	13 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	64 nC
Input Capacitance (Ciss) (Max) @ Vds	1205 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	147 W
Rds On (Max) @ Id, Vgs	309 mOhm
Supplier Device Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Technology	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Mounting Type	Package / Case	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Vgs(th) (Max) @ Id	FET Type	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package
Vishay General Semiconductor - Diodes Division SIHD14N60E-BE3	MOSFET (Metal Oxide)	1205 pF	309 mOhm	10 V	600 V	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	13 A	-55 °C	150 °C	147 W	4 V	N-Channel	30 V	64 nC	DPAK
Vishay General Semiconductor - Diodes Division SIHD14N60E-GE3	MOSFET (Metal Oxide)	1205 pF	309 mOhm	10 V	600 V	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	13 A	-55 °C	150 °C	147 W	4 V	N-Channel	30 V	64 nC	DPAK

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General part information

N-Channel 600 V 13A (Tc) 147W (Tc) Surface Mount DPAK

Technical documentation and resources