SIHD14 Series

Catalog

MOSFET N-CH 600V 13A TO252AA

Part	Technology	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Mounting Type	Package / Case	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Vgs(th) (Max) @ Id	FET Type	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package
Vishay General Semiconductor - Diodes Division SIHD14N60E-BE3	MOSFET (Metal Oxide)	1205 pF	309 mOhm	10 V	600 V	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	13 A	-55 °C	150 °C	147 W	4 V	N-Channel	30 V	64 nC	DPAK
Vishay General Semiconductor - Diodes Division SIHD14N60E-GE3	MOSFET (Metal Oxide)	1205 pF	309 mOhm	10 V	600 V	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	13 A	-55 °C	150 °C	147 W	4 V	N-Channel	30 V	64 nC	DPAK