Discrete Semiconductor Products

SI5902BDC-T1-E3

LTB

MOSFET 2N-CH 30V 4A 1206-8

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Discrete Semiconductor Products

LTB

MOSFET 2N-CH 30V 4A 1206-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI5902BDC-T1-E3

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	7 nC
Input Capacitance (Ciss) (Max) @ Vds	220 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Power - Max [Max]	3.12 W
Rds On (Max) @ Id, Vgs	65 mOhm
Supplier Device Package	1206-8 ChipFET™
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Mounting Type	Configuration	Power - Max [Max]	FET Feature	Current - Continuous Drain (Id) @ 25°C	Technology	Vgs(th) (Max) @ Id	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs
Vishay General Semiconductor - Diodes Division SI5902DC-T1-E3	-55 °C	150 °C	30 V	85 mOhm	Surface Mount	2 N-Channel (Dual)	1.1 W	Logic Level Gate	2.9 A	MOSFET (Metal Oxide)	1 V	1206-8 ChipFET™	7.5 nC
Vishay General Semiconductor - Diodes Division SI5902BDC-T1-E3	-55 °C	150 °C	30 V	65 mOhm	Surface Mount	2 N-Channel (Dual)	3.12 W	Logic Level Gate	4 A	MOSFET (Metal Oxide)	3 V	1206-8 ChipFET™		220 pF	7 nC

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General part information

Mosfet Array 30V 4A (Tc) 3.12W Surface Mount 1206-8 ChipFET™

Technical documentation and resources

No documents available