SI5902 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET 2N-CH 30V 2.9A 1206-8
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Mounting Type | Configuration | Power - Max [Max] | FET Feature | Current - Continuous Drain (Id) @ 25°C | Technology | Vgs(th) (Max) @ Id | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | -55 °C | 150 °C | 30 V | 85 mOhm | Surface Mount | 2 N-Channel (Dual) | 1.1 W | Logic Level Gate | 2.9 A | MOSFET (Metal Oxide) | 1 V | 1206-8 ChipFET™ | 7.5 nC | ||
Vishay General Semiconductor - Diodes Division | -55 °C | 150 °C | 30 V | 65 mOhm | Surface Mount | 2 N-Channel (Dual) | 3.12 W | Logic Level Gate | 4 A | MOSFET (Metal Oxide) | 3 V | 1206-8 ChipFET™ | 220 pF | 7 nC |