SISS76LDN-T1-GE3

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MOSFET N-CH 70V 19.6A/67.4A PPAK

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Discrete Semiconductor Products

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MOSFET N-CH 70V 19.6A/67.4A PPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SISS76LDN-T1-GE3

Current - Continuous Drain (Id) @ 25°C	19.6 A, 67.4 A
Drain to Source Voltage (Vdss)	70 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	3.3 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	33.5 nC
Input Capacitance (Ciss) (Max) @ Vds	2780 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8SH
Power Dissipation (Max)	4.8 W, 57 W
Rds On (Max) @ Id, Vgs	6.25 mOhm
Supplier Device Package	PowerPAK® 1212-8SH
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.6 V

Part	FET Type	Power Dissipation (Max)	Supplier Device Package	Rds On (Max) @ Id, Vgs	Technology	Package / Case	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C
Vishay General Semiconductor - Diodes Division SISS76LDN-T1-GE3	N-Channel	4.8 W 57 W	PowerPAK® 1212-8SH	6.25 mOhm	MOSFET (Metal Oxide)	PowerPAK® 1212-8SH	70 V	33.5 nC	1.6 V	Surface Mount	2780 pF	-55 °C	150 °C	3.3 V	4.5 V	12 V	19.6 A 67.4 A

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General part information

N-Channel 70 V 19.6A (Ta), 67.4A (Tc) 4.8W (Ta), 57W (Tc) Surface Mount PowerPAK® 1212-8SH

Technical documentation and resources