SISS76 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 70V 19.6A/67.4A PPAK
| Part | FET Type | Power Dissipation (Max) | Supplier Device Package | Rds On (Max) @ Id, Vgs | Technology | Package / Case | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs(th) (Max) @ Id | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Min] | Operating Temperature [Max] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | N-Channel | 4.8 W 57 W | PowerPAK® 1212-8SH | 6.25 mOhm | MOSFET (Metal Oxide) | PowerPAK® 1212-8SH | 70 V | 33.5 nC | 1.6 V | Surface Mount | 2780 pF | -55 °C | 150 °C | 3.3 V | 4.5 V | 12 V | 19.6 A 67.4 A |