Discrete Semiconductor Products

APT80GA60LD40

Active

IGBT PT MOS 8 COMBI 600 V 80 A TO-264 3 TO-264 TUBE ROHS COMPLIANT: YES

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Discrete Semiconductor Products

Active

IGBT PT MOS 8 COMBI 600 V 80 A TO-264 3 TO-264 TUBE ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	APT80GA60LD40

Current - Collector (Ic) (Max) [Max]	143 A
Current - Collector Pulsed (Icm)	240 A
Gate Charge	230 nC
IGBT Type	PT
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-264AA, TO-264-3
Power - Max [Max]	625 W
Reverse Recovery Time (trr)	22 ns
Supplier Device Package	TO-264
Switching Energy	840 µJ, 751 µJ
Td (on/off) @ 25°C	23 ns, 158 ns
Test Condition	400 V, 47 A, 15 V, 4.7 Ohm
Vce(on) (Max) @ Vge, Ic	2.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Gate Charge	Td (on/off) @ 25°C	Switching Energy	IGBT Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Reverse Recovery Time (trr)	Test Condition	Current - Collector (Ic) (Max) [Max]	Package / Case	Vce(on) (Max) @ Vge, Ic	Current - Collector Pulsed (Icm)	Supplier Device Package	Power - Max [Max]
Microchip Technology APT80GA60LD40	-55 °C	150 °C	Through Hole	230 nC	23 ns 158 ns	751 µJ 840 µJ	PT	600 V	22 ns	4.7 Ohm 15 V 47 A 400 V	143 A	TO-264-3 TO-264AA	2.5 V	240 A	TO-264	625 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Fast switching with low EMI

Very Low Eoff for maximum effi ciency

Ultra low Cres for improved noise immunity

Technical documentation and resources