Discrete Semiconductor Products

2N6059

Obsolete

TRANS NPN DARL 100V 12A TO3

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Discrete Semiconductor Products

Obsolete

TRANS NPN DARL 100V 12A TO3

Technical Specifications

Parameters and characteristics for this part

Specification	2N6059

Current - Collector (Ic) (Max) [Max]	12 A
Current - Collector Cutoff (Max) [Max]	1 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	750 hFE
Frequency - Transition	4 MHz
Mounting Type	Chassis Mount
Operating Temperature	200 °C
Package / Case	TO-3, TO-204AA
Power - Max [Max]	150 W
Supplier Device Package	TO-3
Vce Saturation (Max) @ Ib, Ic	3 V
Voltage - Collector Emitter Breakdown (Max) [Max]	100 V

Part	Supplier Device Package	Frequency - Transition	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Package / Case	Operating Temperature	Current - Collector (Ic) (Max) [Max]	Mounting Type	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type
STMicroelectronics 2N6059	TO-3	4 MHz	100 V	150 W	3 V	TO-204AA TO-3	200 °C	12 A	Chassis Mount	1 mA	750 hFE
STMicroelectronics 2N6036	SOT-32		80 V	40 W	3 V	TO-126-3 TO-225AA	150 °C	4 A	Through Hole	100 µA	750	PNP - Darlington

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor NPN - Darlington 100 V 12 A 4MHz 150 W Chassis Mount TO-3

Technical documentation and resources