Discrete Semiconductor Products

SIDR5102EP-T1-RE3

Active

N-CHANNEL 100 V (D-S) 175C MOSFE

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

N-CHANNEL 100 V (D-S) 175C MOSFE

Technical Specifications

Parameters and characteristics for this part

Specification	SIDR5102EP-T1-RE3

Current - Continuous Drain (Id) @ 25°C	28.2 A, 126 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	7.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	51 nC
Input Capacitance (Ciss) (Max) @ Vds	2850 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	150 W, 7.5 W
Rds On (Max) @ Id, Vgs	4.1 mOhm
Supplier Device Package	PowerPAK® SO-8DC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Current - Continuous Drain (Id) @ 25°C	FET Type	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Mounting Type
Vishay General Semiconductor - Diodes Division SIDR5102EP-T1-RE3	28.2 A 126 A	N-Channel	4.1 mOhm	10 V	7.5 V	PowerPAK® SO-8	51 nC	20 V	2850 pF	4 V	7.5 W 150 W	100 V	PowerPAK® SO-8DC	-55 °C	175 ░C	MOSFET (Metal Oxide)	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 3.67
	Digi-Reel®	1	$ 3.67
	Tape & Reel (TR)	6000	$ 1.20

General part information

N-Channel 100 V 28.2A (Ta), 126A (Tc) 7.5W (Ta), 150W (Tc) Surface Mount PowerPAK® SO-8DC

Technical documentation and resources