SIDR5102 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
N-CHANNEL 100 V (D-S) 175C MOSFE
| Part | Current - Continuous Drain (Id) @ 25°C | FET Type | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Package / Case | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Technology | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 28.2 A 126 A | N-Channel | 4.1 mOhm | 10 V | 7.5 V | PowerPAK® SO-8 | 51 nC | 20 V | 2850 pF | 4 V | 7.5 W 150 W | 100 V | PowerPAK® SO-8DC | -55 °C | 175 ░C | MOSFET (Metal Oxide) | Surface Mount |