Discrete Semiconductor Products
STL8DN6LF6AG
ActiveSTMicroelectronics
AUTOMOTIVE-GRADE DUAL N-CHANNEL 60 V, 21 MOHM TYP., 32 A STRIPFET F6 POWER MOSFET IN A POWERFLAT 5X6 DOUBLE ISLAND PACKAGE
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Discrete Semiconductor Products
STL8DN6LF6AG
ActiveSTMicroelectronics
AUTOMOTIVE-GRADE DUAL N-CHANNEL 60 V, 21 MOHM TYP., 32 A STRIPFET F6 POWER MOSFET IN A POWERFLAT 5X6 DOUBLE ISLAND PACKAGE
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Technical Specifications
Parameters and characteristics for this part
| Specification | STL8DN6LF6AG |
|---|---|
| Configuration | 2 N-Channel (Dual) |
| Current - Continuous Drain (Id) @ 25°C | 32 A |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerVDFN |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 27 mOhm |
| Supplier Device Package | PowerFlat™ (5x6) |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STL8DN6LF6AG Series
This device is a dual N-channel Power MOSFET developed using the STripFET F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages.
Documents
Technical documentation and resources