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ONSEMI FDN359BN
Discrete Semiconductor Products

FDN359BN

Active
ON Semiconductor

POWER MOSFET, N CHANNEL, 30 V, 2.7 MA, 0.046 OHM, SUPERSOT, SURFACE MOUNT

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ONSEMI FDN359BN
Discrete Semiconductor Products

FDN359BN

Active
ON Semiconductor

POWER MOSFET, N CHANNEL, 30 V, 2.7 MA, 0.046 OHM, SUPERSOT, SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

SpecificationFDN359BN
Current - Continuous Drain (Id) @ 25°C2.7 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]7 nC
Input Capacitance (Ciss) (Max) @ Vds650 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]500 mW
Rds On (Max) @ Id, Vgs [Max]46 mOhm
Supplier Device PackageSOT-23-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.72
10$ 0.45
100$ 0.29
500$ 0.22
1000$ 0.20
Digi-Reel® 1$ 0.72
10$ 0.45
100$ 0.29
500$ 0.22
1000$ 0.20
Tape & Reel (TR) 3000$ 0.17
6000$ 0.15
9000$ 0.15
15000$ 0.14
21000$ 0.13
30000$ 0.13
NewarkEach (Supplied on Full Reel) 3000$ 0.21
6000$ 0.18
12000$ 0.16
18000$ 0.15
30000$ 0.14
ON SemiconductorN/A 1$ 0.14

Description

General part information

FDN359BN Series

This N-Channel Logic Level MOSFET is produced using an advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.