
AFGHL25T120RLD
ObsoleteIGBT - AUTOMOTIVE GRADE 1200 V 25 A
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AFGHL25T120RLD
ObsoleteIGBT - AUTOMOTIVE GRADE 1200 V 25 A
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Technical Specifications
Parameters and characteristics for this part
| Specification | AFGHL25T120RLD |
|---|---|
| Current - Collector Pulsed (Icm) | 100 A |
| Gate Charge | 277 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power - Max [Max] | 400 W |
| Reverse Recovery Time (trr) | 159 ns |
| Supplier Device Package | TO-247-3 |
| Switching Energy | 730 µJ, 1.94 mJ |
| Td (on/off) @ 25°C | 27.2 ns |
| Td (on/off) @ 25°C | 116 ns |
| Test Condition | 5 Ohm, 15 V, 25 A, 600 V |
| Vce(on) (Max) @ Vge, Ic | 2 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 1200 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
AFGHL25T120RLD Series
AEC Q101 qualified Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction. Provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss offers optimum performance for both hard and soft switching topology in automotive application.
Documents
Technical documentation and resources