Discrete Semiconductor Products

AFGHL25T120RH

Obsolete

ON Semiconductor

1200V/25A FSII IGBT (NO FRD) TO2

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Discrete Semiconductor Products

AFGHL25T120RH

Obsolete

ON Semiconductor

1200V/25A FSII IGBT (NO FRD) TO2

Deep-Dive with AI

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	AFGHL25T120RH

Current - Collector Pulsed (Icm)	100 A
Gate Charge	189 nC
Grade	Automotive
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	261 W
Qualification	AEC-Q101
Reverse Recovery Time (trr)	159 ns
Supplier Device Package	TO-247-3
Switching Energy	770 µJ, 1.94 mJ
Td (on/off) @ 25°C	27 ns, 118 ns
Test Condition	5 Ohm, 15 V, 25 A, 600 V
Vce(on) (Max) @ Vge, Ic	2.4 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

AFGHL25T120RLD Series

IGBT - Automotive Grade 1200 V 25 A

Part	IGBT Type	Current - Collector Pulsed (Icm)	Supplier Device Package	Grade	Vce(on) (Max) @ Vge, Ic	Power - Max [Max]	Td (on/off) @ 25°C	Gate Charge	Test Condition	Reverse Recovery Time (trr)	Switching Energy	Mounting Type	Qualification	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Td (on/off) @ 25°C
ON Semiconductor AFGHL25T120RH	Trench Field Stop	100 A	TO-247-3	Automotive	2.4 V	261 W	27 ns 118 ns	189 nC	5 Ohm 15 V 25 A 600 V	159 ns	1.94 mJ 770 µJ	Through Hole	AEC-Q101	1200 V	-55 °C	175 ░C	TO-247-3
ON Semiconductor AFGHL25T120RLD	Trench Field Stop	100 A	TO-247-3		2 V	400 W	27.2 ns	277 nC	5 Ohm 15 V 25 A 600 V	159 ns	1.94 mJ 730 µJ	Through Hole		1200 V	-55 °C	175 ░C	TO-247-3	116 ns
ON Semiconductor AFGHL25T120RL	Trench Field Stop	100 A	TO-247-3	Automotive	2 V	400 W	27.2 ns	277 nC	5 Ohm 15 V 25 A 600 V	159 ns	1.94 mJ 730 µJ	Through Hole	AEC-Q101		-55 °C	175 ░C	TO-247-3	116 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

AFGHL25T120RLD Series

AEC Q101 qualified Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction. Provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss offers optimum performance for both hard and soft switching topology in automotive application.

Documents

Technical documentation and resources

No documents available