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ONSEMI BD237G
Discrete Semiconductor Products

MJE350

Active
STMicroelectronics

BIPOLAR (BJT) SINGLE TRANSISTOR, PNP, 300 V, 20.8 W, 500 MA, 30 ROHS COMPLIANT: YES

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Search across all available documentation for this part.

DocumentsProduct Change Notice ENTechnical Data Sheet EN+2
ONSEMI BD237G
Discrete Semiconductor Products

MJE350

Active
STMicroelectronics

BIPOLAR (BJT) SINGLE TRANSISTOR, PNP, 300 V, 20.8 W, 500 MA, 30 ROHS COMPLIANT: YES

Deep-Dive with AI

DocumentsProduct Change Notice ENTechnical Data Sheet EN+2

Technical Specifications

Parameters and characteristics for this part

SpecificationMJE350
Current - Collector (Ic) (Max) [Max]500 mA
Current - Collector Cutoff (Max) [Max]100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce30
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseTO-225AA, TO-126-3
Power - Max [Max]20.8 W
Supplier Device PackageSOT-32-3
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)300 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 1.38
1$ 0.70
10$ 0.87
50$ 0.58
100$ 0.58
100$ 0.42
500$ 0.45
500$ 0.35
1000$ 0.41
1000$ 0.30
2000$ 0.38
2000$ 0.27
5000$ 0.34
5000$ 0.25
10000$ 0.23
10000$ 0.32
NewarkEach 1$ 0.59
10$ 0.48
100$ 0.42
500$ 0.34
1000$ 0.30
2500$ 0.26
10000$ 0.23

Description

General part information

MJE350 Series

The MJE340 is a silicon planar NPN transistor intended for use in medium power linear and switching applications. It is mounted in SOT-32.

The complementary PNP type is MJE350.